Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Published:2018-01-21 Issue:3 Volume:123 Page:033905
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yin Li¹,Wang Xiaocha²^ORCID,Mi Wenbo¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China

2. School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China

Funder

High Performance Computing Center of Tianjin University, China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5017524

Reference37 articles.

1. Ferroelectric Control of Spin Polarization

2. First-principles study of MnAl for its application in MgO-based perpendicular magnetic tunnel junctions

3. Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction

4. Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

5. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

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