EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID‐PHASE EPITAXY
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653441
Reference6 articles.
1. NEW FLUORIDE COMPOUNDS FOR EFFICIENT INFRARED‐TO‐VISIBLE CONVERSION
2. EFFICIENT INFRARED‐TO‐VISIBLE CONVERSION BY RARE‐EARTH OXYCHLORIDES
3. Radiative Recombination inn-Type InP
4. Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopy
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1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices;Nature;2001-01
2. High Purity Liquid Phase Epitaxial Growth of InP;Japanese Journal of Applied Physics;1993-11-15
3. Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression;Canadian Journal of Physics;1991-03-01
4. Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy;Journal of The Electrochemical Society;1980-10-01
5. An LPE Growth Method to Reduce Thermal Degradation of Substrates;Japanese Journal of Applied Physics;1980-08
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