Modification of oxidation resistance of copper films by shallow implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379774
Reference18 articles.
1. Copper-Based Metallization for ULSI Applications
2. Materials Issues in Copper Interconnections
3. Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?
4. Diffusion barrier properties of TiW between Si and Cu
5. Effect of B, C, N, and Ne ion implantation on the oxidation of polycrystalline Cu
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