Hole conduction and valence‐band structure of Si3N4 films on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88413
Reference8 articles.
1. Properties of MNOS structures
2. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
3. Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
4. Determination of the sign of carrier transported across SiO2 films on Si
5. Two-band conduction of amorphous silicon nitride
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