Oxide and interface degradation resulting from substrate hot‐hole injection in metal‐oxide‐semiconductor field‐effect transistors at 295 and 77 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356311
Reference22 articles.
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5. On the geometric component of charge-pumping current in MOSFETs
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