Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4792747
Reference22 articles.
1. The Diffusivity and Solubility of Oxygen in Silicon
2. Enhanced and wafer‐dependent oxygen diffusion in CZ‐Si at 500–700 °C
3. The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures
4. Diffusivity of oxygen in Czochralski silicon at 400–750 °C
5. Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion
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1. Temperature Mapping of Stacked Silicon Dies from X-Ray-Diffraction Intensities;Physical Review Applied;2022-07-29
2. Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction;AIP Advances;2020-10-01
3. Sample thickness effect of thermal vibration correction within X-ray dynamical theory for germanium-doped silicon;Journal of Applied Physics;2017-03-28
4. Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation;Journal of Applied Physics;2015-07-07
5. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction;Applied Physics Letters;2014-09-15
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