Influence of ion induced amorphicity on the diffusion of gold into silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2259815
Reference16 articles.
1. Properties of noble-metal/silicon junctions
2. Morphological evolution of the low‐temperature oxidation of silicon with a gold overlayer
3. Oxidation behavior of Au‐Si films
4. LOW‐TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
5. Formation of silicon oxide over gold layers on silicon substrates
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2. Magnetic-ion-doped silicon nanostructures fabricated by ion implantation and electron beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
3. Dual N/Pb ion-implanted Si: Temperature dependence of the novel shift of the Pb peak under electron beam annealing;Applied Surface Science;2011-03
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5. Ion-beam-induced enhanced diffusion from gold thin films in silicon;Journal of Physics: Condensed Matter;2008-11-06
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