Theoretical and experimental study of the chemisorption of 1,3 disilabutane on the Si(100) surface
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1544092
Reference21 articles.
1. Progress in SiC: from material growth to commercial device development
2. Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
3. Monocrystalline silicon carbide nanoelectromechanical systems
4. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(100) surface;Applied Surface Science;2012-01
2. Addition of POSS−T8 to the Si(100) Surface;The Journal of Physical Chemistry C;2008-01-01
3. Diamond surface modification following thermal etching of Si supported hydrogenated diamond films by DBr;Surface Science;2006-02
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