Faceted inversion domain boundary in GaN films doped with Mg
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1318731
Reference7 articles.
1. Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
2. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
3. Interdiffusion of In and Ga in InGaN quantum wells
4. Inversion of wurtzite GaN(0001) by exposure to magnesium
5. Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
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3. Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg;Scientific Reports;2022-10-26
4. Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation;Journal of Applied Physics;2022-08-14
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