High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric-Reference-Cited by-同舟云学术

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Published:2018-11 Issue:11 Volume:6 Page:111105
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Sasama Yosuke¹²^ORCID,Komatsu Katsuyoshi¹,Moriyama Satoshi¹^ORCID,Imura Masataka³^ORCID,Teraji Tokuyuki³,Watanabe Kenji³^ORCID,Taniguchi Takashi³,Uchihashi Takashi¹^ORCID,Takahide Yamaguchi¹²

Affiliation:

1. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan

2. University of Tsukuba, Tsukuba 305-8571, Japan

3. Research Center for Functional Materials, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5055812

Reference54 articles.

1. Diamond as an electronic material

2. High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

3. Single crystal diamond wafers for high power electronics

4. Diamond field-effect transistors for RF power electronics: Novel NO2hole doping and low-temperature deposited Al2O3passivation

5. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

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