Electrical properties of low‐temperature‐grown CaF2on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106650
Reference14 articles.
1. Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures
2. Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures
3. An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon
4. The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures
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2. Growth characteristics of ultra-thin epitaxial CaxMg1−xF2 alloys on Si(111) substrates;Journal of Crystal Growth;2005-12
3. Carrier dynamics modeling in a precharged Si/CaF2 heterostructure;Journal of Applied Physics;2001-06
4. In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy;Applied Physics Letters;2001-03-26
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