Growth characteristics of ultra-thin epitaxial CaxMg1−xF2 alloys on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy
2. Heteroepitaxial Growth of CdF2Layers on CaF2/Si(111) by Molecular Beam Epitaxy
3. MBE-growth peculiarities of fluoride (CdF2–CaF2) thin film structures
4. CdF2/CaF2Resonant Tunneling Diode Fabricated on Si(111)
5. Negative Differential Resistance of CaF 2/CdF 2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
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1. Dependence of Resonant Voltage on Quantum-Well Width in CaF$_{2}$/Fe$_{3}$Si/CaF$_{2}$ Resonant Tunneling Diodes;Japanese Journal of Applied Physics;2011-10-20
2. Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy;Thin Solid Films;2011-10
3. Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2Resonant Tunneling Diodes;Japanese Journal of Applied Physics;2011-10-01
4. Improved Reproducibility in CaF2/Fe3Si/CaF2Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2010-06-07
5. High insulating quality CaF2 pseudomorphic films on Si(111);Applied Physics Letters;2007-04-02
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