Effects of p-doping on the thermal sensitivity of individual Si nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2968134
Reference21 articles.
1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
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3. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
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1. Point defects in the silicon nanowire;SPIE Proceedings;2013-12-16
2. Patterned growth of high aspect ratio silicon wire arrays at moderate temperature;Journal of Crystal Growth;2011-04
3. Chemical Functionalization of Silicon Nanowires by an Electroactive Group: A Direct Spectroscopic Characterization of the Hybrid Nanomaterial;The Journal of Physical Chemistry C;2010-02-12
4. Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy;The Journal of Physical Chemistry C;2009-12-23
5. Matrix-Free Laser Desorption/Ionization Mass Spectrometry on Silicon Nanowire Arrays Prepared by Chemical Etching of Crystalline Silicon;Langmuir;2009-08-27
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