Thermal reactions of Pd/AlxGa1−xAs contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363141
Reference15 articles.
1. Self-limiting advancing gates for GaAs metal–semiconductor field effect transistors
2. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
3. The Schottky‐barrier height of Au onn‐Ga1−xAlxAs as a function of AlAs content
4. Schottky barrier heights of molecular beam epitaxial metal‐AlGaAs structures
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1. Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures;Journal of Physics and Chemistry of Solids;2001-04
2. Structural properties and interfacial layer formation of Pd films grown on InP substrates;Applied Surface Science;1998-10
3. Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies;Journal of Applied Physics;1998-01
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