Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides-Reference-Cited by-同舟云学术

Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides

Published:2016-12-28 Issue:24 Volume:120 Page:245704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mohammed Mazharuddin,Verhulst Anne S.,Verreck Devin,Van de Put Maarten,Simoen Eddy,Sorée Bart,Kaczer Ben,Degraeve Robin,Mocuta Anda,Collaert Nadine,Thean Aaron,Groeseneken Guido

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972482

Reference25 articles.

1. Tunnel Field-Effect Transistors: State-of-the-Art

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

4. Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

5. Uniform Strain in Heterostructure Tunnel Field-Effect Transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions;Applied Physics Reviews;2023-03-01

2. Singular and Low-Dimensional Potentials;Jost Functions in Quantum Mechanics;2022

3. Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET;IEEE Transactions on Electron Devices;2020-08

4. Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices;IEEE Electron Device Letters;2019-11

5. Phonon-assisted tunneling in direct-bandgap semiconductors;Journal of Applied Physics;2019-01-07