Picosecond relaxation mechanisms in highly excited GaInAsP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343314
Reference27 articles.
1. Spectroscopy of hot carriers in semiconductors
2. Picosecond optically-induced intervalence band absorption in germanium
3. Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effects
4. Picosecond Optical Measurements of Band-to-Band Auger Recombination of High-Density Plasmas in Germanium
5. Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells
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1. Intrinsic Stimulated Intense Picosecond Emission in the Amplification Saturation Mode and the “Threshold” State of Electron-Hole Plasma in the AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure;Journal of Communications Technology and Electronics;2023-03
2. Intrinsic Stimulated Intense Picosecond Emission in the Amplification Saturation Mode and the “Threshold” State of Electron-Hole Plasma in the AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure;Радиотехника и электроника;2023-03-01
3. Picosecond Modulation of the Fundamental Absorption of Light: Mapping of Oscillations and Depletion of Electron Population in the Field of Intrinsic Intense Stimulated Emission in an AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure (Experimental Study);Journal of Experimental and Theoretical Physics;2022-12
4. Determination of Carrier Lifetimes in Organic-Inorganic Hybrid Solar Cells Based on Sb2S3 by Using the Time-Resolved Photocurrent;Journal of the Korean Physical Society;2018-03
5. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy;AIP Advances;2017-07
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