1/f noise inn-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371501
Reference20 articles.
1. Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors
2. The impact of device scaling on the current fluctuations in MOSFET's
3. The effects of plasma etching induced gate oxide degradation on MOSFET's 1/f noise
4. Low-frequency noise in near-fully-depleted TFSOI MOSFETs
5. Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress;IEEE Transactions on Electron Devices;2012-11
2. Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors;Applied Physics Letters;2009-09-21
3. Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor;Acta Physica Sinica;2008
4. Preface;Specular Gloss;2008
5. References;Specular Gloss;2008
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