Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors-Reference-Cited by-同舟云学术

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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Published:2009-09-21 Issue:12 Volume:95 Page:123508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3231924

Reference19 articles.

1. Physical origin of the excess thermal noise in short channel MOSFETs

2. Channel noise modeling of deep submicron MOSFETs

3. Proceedings of the Symposium on VLSI Technology;Ou J. J.,1999

4. Noise modeling for RF CMOS circuit simulation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress;IEEE Transactions on Electron Devices;2012-11

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