Lateral composition modulation in AlAs/InAs and GaAs/InAs short period superlattices structures: The role of surface segregation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference33 articles.
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1. Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation;Journal of Vacuum Science & Technology A;2023-06-06
2. Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy;Journal of Crystal Growth;2023-03
3. Atomic segregation effects on (AlxGa1-xAs)m/(GaAs)n superlattice structure;Micro and Nanostructures;2022-07
4. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications;Nanomaterials;2022-04-15
5. Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies;Applied Surface Science;2019-08
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