Effect of cap layer thickness on the perpendicular magnetic anisotropy in top MgO/CoFeB/Ta structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3621353
Reference12 articles.
1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
4. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
5. Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition
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