Electron conduction mechanisms in magnetic tunnel junctions fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Crossover from direct to trap assisted Fowler Nordheim (FN) tunneling in CoFeB/MgO/CoFeB magnetic tunnel junctions;The European Physical Journal Applied Physics;2023
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