Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350639
Reference15 articles.
1. Silicon molecular beam epitaxy: 1984–1986
2. Charged carrier transport in Si1−xGexpseudomorphic alloys matched to Si—strain‐related transport improvements
3. Gas source silicon molecular beam epitaxy using disilane
4. Summary Abstract: Chemisorption of silanes on the Si(111)‐(7×7) surface
5. Gas source molecular‐beam epitaxy of Si and SiGe using Si2H6and GeH4
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1. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy;Handbook of Crystal Growth;2015
2. A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers;Thin Solid Films;2012-02
3. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
4. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11
5. High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C;Applied Physics Letters;1996-09-09
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