Two-dimensional perovskite heterostructures for single crystal semiconductor devices

Author:

Park Jee Yung1ORCID,Lee Yoon Ho12ORCID,Kim Hyojung13ORCID,Dou Letian1ORCID

Affiliation:

1. Davidson School of Chemical Engineering, Purdue University 1 , West Lafayette, Indiana 47906, USA

2. Department of Chemistry, Purdue University 2 , West Lafayette, Indiana 47907, USA

3. Department of Semiconductor Systems Engineering, Sejong University 3 , Seoul 05006, Republic of Korea

Abstract

Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals, and recent progress in fabricating its heterostructures is notable as well. In particular, with growing interest in 2D van der Waals heterostructures, 2D perovskites have become a strong candidate as a new building block for heterostructures to reveal unique physical properties across different interfaces. Until now, various heterostructure devices of 2D perovskite single crystals with other types of 2D materials such as transition metal dichalcogenides (TMDs) and graphene have been studied, which have shown intriguing results including interlayer excitons and enhanced electronic properties. Here, we introduce various synthetic approaches to realize 2D perovskite single crystals and unique characteristics of their single crystal heterostructures fabricated with precision, possessing sharp interfaces. Moreover, recent studies of semiconductor devices based on 2D perovskite single crystal heterostructures are discussed in-depth. New perspectives to further the horizon in the field of 2D perovskite heterostructures are suggested in this work including the consideration of metal–2D material van der Waals contact, application of dry transfer techniques, electric bias driven ion diffusion studies, and nanocrystal array fabrication. 2D perovskite heterostructure single crystal devices factoring in these novel perspectives will further uncover the true potential of these materials for highly efficient and stable semiconductor devices.

Funder

National Science Foundation

U.S. Department of Energy

Korea National Research Foundation Postdoctoral Fellowship

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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