The thermal‐expansion parameters of some GaxIn1−xAsyP1−xalloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90575
Reference10 articles.
1. 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
2. The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
3. Macroscopic deterioration of fluorescence from AlxGa1−xAs–GaAs DH material following microscopic physical damage
4. The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy
5. Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates
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