Does high density–low pressure etching depend on the type of plasma source?
Author:
Publisher
AIP Publishing
Subject
Condensed Matter Physics
Link
http://aip.scitation.org/doi/pdf/10.1063/1.871675
Reference5 articles.
1. Measurements of the presheath in an electron cyclotron resonance etching device
2. Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
3. Absolute fluorine atom concentrations in RIE and ECR CF4plasmas measured by actinometry
4. Symmetric rate model for fluorocarbon plasma etching of SiO2
5. Magnetic and collisional effects on presheaths
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