Photoionization of Electrons at Sulfur Centers in Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659717
Reference11 articles.
1. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
2. DIRECT OBSERVATION OF THE MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW‐TEMPERATURE HIGH‐FREQUENCY PHOTOCAPACITANCE
3. Thermal emission and capture of electrons at sulfur centers in silicon
4. Diffusion and oxide masking in silicon by the box method
5. Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions
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