Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures
Author:
Affiliation:
1. Nanoelectronic Devices Laboratory (Nanolab), EPFL, 1015 Lausanne, Switzerland
2. NaMLab gGmbH/TU Dresden, 01187 Dresden, Germany
Funder
Swiss National Science Foundation
European Union's Horizon 2020 Research and Innovation program
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0021272
Reference17 articles.
1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
2. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
3. Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
4. Ferroelectric negative capacitance
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