Roughening of porous SiCOH materials in fluorocarbon plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446820
Reference49 articles.
1. Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma
2. Etching of low-k materials in high density fluorocarbon plasma
3. Etching of porous SiOCH materials in fluorocarbon-based plasmas
4. Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials
5. Porosity-induced effects during C[sub 4]F[sub 8]∕90% Ar plasma etching of silica-based ultralow-k dielectrics
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