Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation
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Published:2022-12-01
Issue:12
Volume:12
Page:125317
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ISSN:2158-3226
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Container-title:AIP Advances
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language:en
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Short-container-title:AIP Advances
Author:
Naganuma Hiroshi123ORCID, Honjo Hiroaki1ORCID, Kaneta Chioko1ORCID, Nishioka Koichi1ORCID, Ikeda Shoji1234ORCID, Endoh Tetsuo12345
Affiliation:
1. Center for Innovative Integrated Electronic System (CIES), Tohoku University, 468-1, Aoba, Aramaki, Aoba-ku, Sendai 980-8572, Japan 2. Center for Spintronics Research Network (CSRN), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan 3. Center for Science and Innovation in Spintronics (CSIS), Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan 4. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan 5. Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Abstract
The influence of the sidewall damage on the thermal stability factor (Δ) of quad-interface magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based micromagnetic simulation. The quad-MTJs consist of a reference layer/MgO-barrier/CoFeB/middle-MgO/CoFeB/MgO-cap, which has four CoFeB/MgO interfaces to enhance the interfacial perpendicular magnetic anisotropy for large Δ. Experimentally obtained magnetic parameters at room temperature [e.g., saturation magnetization ( Ms), stiffness constant ( As), interfacial perpendicular magnetic anisotropy constants ( Ki), and exchange coupling ( Jex)] in blanket multilayer films of the quad-MTJs were used in micromagnetic simulation. The influence of the sidewall damage on the quad-MTJs, which is difficult to be analyzed in the experimental way, was investigated. The quad-MTJs without damaged layers having relatively higher Ki show the split of the energy barrier into two, resulting in a decrease in Δ. When the decrease in magnetic anisotropy energy ( Eani) is more than the increase in the static magnetic energy ( Esta), the antiferromagnetically (AF) coupled state of two free layers is formed at the midpoint to minimize the total energy ( Eall). This causes the split of the energy barrier. The sidewall damage plays a role in lowering Ki in each layer, consequently avoiding the formation of the AF state. Note that the value of Δ with the sidewall damage, which shows the unified energy barrier, is comparable to non-damaged Δ, which shows the split of the energy barrier; these quad-MTJs have the same volume of free layers.
Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy
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