Excitonic binding energies in diffused‐intermixed GaAs/AlAs/AlGaAs double barrier quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359574
Reference34 articles.
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2. Post-growth tailoring of the optical properties of GaAs/AlGaAs quantum well structures
3. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering
4. A photoluminescence study of Si-implantation-induced mixing of GaAlAs/GaAs MQW structures for optical waveguides
5. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
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2. A surface photovoltage spectroscopy study of GaAs∕AlAs complicated nanostructures with graded interfaces;Journal of Applied Physics;2007-06-15
3. Photoluminescence line-shape analysis in quantum wells embedded in superlattices;Materials Science and Engineering: C;2001-08
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5. Electronic states in diffused quantum wells;Journal of Applied Physics;1997-10-15
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