A surface photovoltage spectroscopy study of GaAs∕AlAs complicated nanostructures with graded interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2740357
Reference24 articles.
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2. Characterization of quantum well structures using surface photovoltage spectroscopy
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4. Bound exciton effect and carrier escape mechanisms in temperature-dependent surface photovoltage spectroscopy of a single quantum well
5. Surface photovoltage studies ofInxGa1−xAsandInxGa1−xAs1−yNyquantum well structures
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1. Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications;Materials Research Express;2019-08-28
2. Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers;Thin Solid Films;2014-09
3. Characterization of p-AlxGa1−xAs/p-GaAs structure studied by surface photovoltage in metal–insulator–semiconductor configuration;Materials Science in Semiconductor Processing;2014-04
4. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy;Journal of Applied Physics;2014-03-28
5. The Surface Photovoltage Mechanism of a Silicon Nanoporous Pillar Array;Chinese Physics Letters;2013-08
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