Characterization of p-AlxGa1−xAs/p-GaAs structure studied by surface photovoltage in metal–insulator–semiconductor configuration-Reference-Cited by-同舟云学术

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Characterization of p-AlxGa1−xAs/p-GaAs structure studied by surface photovoltage in metal–insulator–semiconductor configuration

Published:2014-04 Issue: Volume:20 Page:12-16
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Jian,Fan Cui,Chen Xinlong,Jiao GangCheng,Hu Canglu,Qian Yunsheng

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Surface photovoltage phenomena: theory, experiment, and applications

2. Photoadsorption and photodesorption for GaN

3. Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopy

4. A surface photovoltage spectroscopy study of GaAs∕AlAs complicated nanostructures with graded interfaces

5. Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

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1. Combined analysis of energy band diagram and equivalent circuit on nanocrystal solid;Journal of Applied Physics;2016-06-07

2. Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method;Molecular Crystals and Liquid Crystals;2016-03-03

3. Comparative study of Al_xGa_1−xAs/GaAs photocathodes with different aluminum concentrations by surface photovoltage spectroscopy;Applied Optics;2015-09-30

4. Prospects of metal–insulator–semiconductor (MIS) nanojunction structures for enhanced hydrogen evolution in photoelectrochemical cells: A review;Nano Energy;2015-03

5. Synthesis and spectral properties of double D–π–A mono-cyanines as well as preparation of near infrared silicon-based materials;RSC Advances;2015

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