Subject
General Physics and Astronomy
Reference32 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Academic and industry research progress in germanium nanodevices
3. O. Weber ,
E. Josse ,
J. Mazurier ,
N. Degors ,
S. Chhun ,
P. Maury ,
S. Lagrasta ,
D. Barge ,
J.P. Manceau , and
M. Haond , in 2015 Symposium on VLSI Technology (VLSI Technology) (IEEE, 2015), pp. T168–T169.
4. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
5. Oxidation of Si1−xGexalloys at atmospheric and elevated pressure
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