Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305824
Reference12 articles.
1. Ferroelectric Memories
2. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
3. Size Effect on the Phase Transition inPbTiO3Fine Particles
4. Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications
5. Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate
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1. Phase control of iridium and iridium oxide thin films in atomic layer deposition;Journal of Applied Physics;2008-01-15
2. Ultra-thin and isolated dots in polycrystalline lead zirconate titanate films;IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control;2006-12
3. Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD;Journal of Crystal Growth;2004-12
4. Characterization of self-assembling isolated ferroelectric domains by scanning force microscopy;Ultramicroscopy;2004-08
5. Improvement of the dielectric and ferroelectric properties in superlattice structure of Pb(Zr,Ti)O3 thin films grown by a chemical solution route;Applied Physics Letters;2004-06-28
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