Energy characteristics of boron impurity in Si∕Si1−xGex heterostructures with on-center and on-edge selective doping of quantum wells-Reference-Cited by-同舟云学术

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Energy characteristics of boron impurity in Si∕Si1−xGex heterostructures with on-center and on-edge selective doping of quantum wells

Published:2007-10 Issue:10 Volume:33 Page:869-871
ISSN:1063-777X
Container-title:Low Temperature Physics
language:en
Short-container-title:Low Temperature Physics

Author:

Vainberg V. V.,Gudenko Yu. N.,Poroshin V. N.,Tulupenko V. N.,Cheng N. N.,Yang Z. P.,Mashanov V.,Wang K. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2746865

Reference14 articles.

1. Si/SiGe heterostructures: from material and physics to devices and circuits

2. Hole transport due to shallow acceptors along boron doped SiGe quantum wells

3. Shallow Acceptor States in SiGe Quantum Wells

4. Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative residual infrared photoconduction in the p-SiGe/Si heterostructures with selectively doped quantum wells;Journal of Applied Physics;2012-10-15

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