Incorporation kinetics in mixed anion compound semiconductor alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4849035
Reference27 articles.
1. Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
2. GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy
3. Molecular beam epitaxy of highly mismatched N-rich GaN1−xSbx and InN1−xAsx alloys
4. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
5. Long‐wavelength photoluminescence of InAs1−xSbx(0
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