Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition-Reference-Cited by-同舟云学术

Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

Published:2011-06-27 Issue:26 Volume:98 Page:263502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Krajewski Tomasz A.,Luka Grzegorz,Gieraltowska Sylwia,Zakrzewski Adam J.,Smertenko Petro S.,Kruszewski Piotr,Wachnicki Lukasz,Witkowski Bartlomiej S.,Lusakowska Elzbieta,Jakiela Rafal,Godlewski Marek,Guziewicz Elzbieta

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3604796

Reference25 articles.

1. Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition

2. Electrical and hydrogen sensing characteristics of Pd/ZnO Schottky diodes grown on GaAs

3. ZnO Schottky ultraviolet photodetectors

4. New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

5. Contacts to ZnO

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