Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864478
Reference24 articles.
1. Current Status of GaN-Based Solid-State Lighting
2. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
3. Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes
4. Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
5. Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters
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