Enhancement of a rectifying characteristic of InGaP diodes by hydrogenation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369495
Reference16 articles.
1. Hydrogenation of Si‐ and Be‐doped InGaP
2. Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy
3. Study on photoluminescence and Raman scattering of GaInP and AlInP grown by organometallic vapor‐phase epitaxy
4. Epitaxial Growth, Fabrication, and Performance of Ingaas Strained Quantum Well Laser Structures
5. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InAs/GaP/InGaP high-temperature power Schottky rectifier;Applied Physics Letters;2004-04-12
2. Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In0.49Ga0.51P Grown on Si Substrate;Japanese Journal of Applied Physics;2001-03-01
3. Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application;Solar Energy Materials and Solar Cells;2001-02
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