Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98098
Reference13 articles.
1. Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
2. Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes
3. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
4. Room‐temperature continuous‐wave operation of an AlGaInP mesa stripe laser
5. Feasibility of the LPE Growth of AlxGayIn1-x-yP on GaAs Substrates
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