Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks-Reference-Cited by-同舟云学术

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Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Published:2007-06-25 Issue:26 Volume:90 Page:263513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ioannou-Sougleridis V.,Dimitrakis P.,Vamvakas V. Em.,Normand P.,Bonafos C.,Schamm S.,Cherkashin N.,Ben Assayag G.,Perego M.,Fanciulli M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2752769

Reference11 articles.

1. Proceedings of the 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits;Lu C. Y.

2. ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY

3. Low voltage and low power embedded 2T-SONOS flash memories improved by using P-type devices and high-K materials

4. Mechanism of Incipient Oxidation of Bulk Chemical Vapor Deposited Si3 N 4

5. Thermodynamics of the Si‐N‐O System and Kinetic Modeling of Oxidation of Si3 N 4

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1. Spatially varying chemical phase formation on silicon nano ripple by low energy mixed ions bombardment;Journal of Physics: Condensed Matter;2022-01-28

2. Nanoparticle-assisted Frenkel–Poole emission in two-terminal charging-controlled memory devices based on Si-rich silicon nitride thin films;Applied Physics A;2017-09-23

3. Charge retention analysis of Si implanted and wet oxidized SONOS structures;Microelectronic Engineering;2016-06

4. Temperature dependent retention characteristics of ion-beam modified SONOS memories;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

5. Charge-Trap Memories with Ion Beam Modified ONO Stacks;Charge-Trapping Non-Volatile Memories;2015

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