Charge retention analysis of Si implanted and wet oxidized SONOS structures-Reference-Cited by-同舟云学术

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Charge retention analysis of Si implanted and wet oxidized SONOS structures

Published:2016-06 Issue: Volume:159 Page:75-79
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bolomyti E.,Glezos N.,Dimitrakis P.,Normand P.,Benassayg G.,Ioannou-Sougleridis V.

Funder

European Social Fund

ARISTEIA II

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY

2. 3D NAND flash architectures;Lue,2015

3. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

4. Charge-trap memories with ion beam modified ONO stacks;Ioannou-Sougleridis,2015

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