Author:
Hegde Ganesh,Klimeck Gerhard,Strachan Alejandro
Funder
National Science Foundation
Subject
Physics and Astronomy (miscellaneous)
Reference12 articles.
1. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
2. M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y. Wu, R. Wallace, and P. Ye, in Electron Devices Meeting (IEDM), 2009 IEEE International (IEEE, New York, 2010), pp. 1–4.
3. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
4. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces
5. Model of interface states at III-V oxide interfaces
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