Stochastic behavior of an interface-based memristive device

Abstract

A large number of simulation models have been proposed over the years to mimic the electrical behavior of memristive devices. The models are based either on sophisticated mathematical formulations that do not account for physical and chemical processes responsible for the actual switching dynamics or on multi-physical spatially resolved approaches that include the inherent stochastic behavior of real-world memristive devices but are computationally very expensive. In contrast to the available models, we present a computationally inexpensive and robust spatially 1D model for simulating interface-type memristive devices. The model efficiently incorporates the stochastic behavior observed in experiments and can be easily transferred to circuit simulation frameworks. The ion transport, responsible for the resistive switching behavior, is modeled using the kinetic cloud-in-a-cell scheme. The calculated current–voltage characteristics obtained using the proposed model show excellent agreement with the experimental findings.