Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm2 V−1 s−1-Reference-Cited by-同舟云学术

Widely bandgap tunable amorphous Cd–Ga–O oxide semiconductors exhibiting electron mobilities ≥10 cm2 V−1 s−1

Author:

Yanagi Hiroshi¹,Sato Chiyuki²,Kimura Yota²,Suzuki Issei³,Omata Takahisa³,Kamiya Toshio⁴⁵,Hosono Hideo⁴⁵⁶

Affiliation:

1. Graduate Faculty of Interdisciplinary Research, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan

2. Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan

3. Division of Material and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

4. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

5. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

6. Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-16, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Funder

Murata Science Fundation

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference26 articles.

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