Laser‐assisted chemical vapor deposition of Si: Low‐temperature (<600 °C) growth of epitaxial and polycrystalline layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336144
Reference18 articles.
1. Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films
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3. Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si2H6;Journal of Electronic Materials;1992-06
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