Doping effects on post-hydrogenated chemical-vapour-deposited amorphous silicon
Author:
Affiliation:
1. a Laboratoire Central de Recherches , Thomson-C.S.F., B.P. No 10, 91401 , Orsay , France
2. b Groupe de Transitions de Phases, C.N.R.S. , B.P. No 166, 38042 , Grenoble , France
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818208246405
Reference27 articles.
1. Retarding crystallization of CVD amorphous silicon by alloying
2. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
3. The Preparation and Properties of Amorphous Silicon
4. Dersch , H. Stuke , J. and Beichler , J. 1982. (to be published)
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1. Optical and electrical properties of doped amorphous silicon suboxides;Physical Review B;1999-11-15
2. Kinetics Of Hydrogen Evolution And Crystallization In Hydrogenated Amorphous Silicon Films Studied By Thermal Analysis And Raman Scattering;MRS Proceedings;1993
3. Posthydrogenation of low‐pressure chemical‐vapor‐deposited amorphous silicon using a novel internal lamp system and its application to thin‐film transistor fabrication;Journal of Applied Physics;1992-10
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