Conductance Extrema in Metal—Insulator—Semiconductor Tunnel Junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1656379
Reference6 articles.
1. ELECTRON TUNNELING FROM METAL TO InSb
2. Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al‐Al2O3‐SnTe and −GeTe Junctions
3. Tunneling from an Independent-Particle Point of View
4. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film
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1. Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices;Journal of Applied Physics;2002-05
2. Tunneling spectroscopy possibilities in metal-oxide-semiconductor devices with a very thin oxide barrier;Thin Solid Films;1992-01
3. Study of thin anodic SiO2 layers on degenerate silicon by inelastic electron tunnelling spectroscopy;Thin Solid Films;1989-01
4. Quantum size effects and negative resistance in MOS structure with polycrystalline InSb (n-type);Il Nuovo Cimento D;1982-01
5. Minima in conductance characteristics of MIS-Schottky tunnel junctions;Czechoslovak Journal of Physics;1981-03
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