Study of thin anodic SiO2 layers on degenerate silicon by inelastic electron tunnelling spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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1. Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices;Journal of Applied Physics;2002-05
2. Characterization of Metal Oxide Surfaces and Thin Semiconductor Films by Inelastic Electron Tunneling Spectroscopy.;Analytical Sciences;2002
3. Inelastic electron tunneling spectroscopy: Spectroscopy using a phenomenon of electron tunneling (Review).;BUNSEKI KAGAKU;2001
4. Characterization of evaporated silicon and silicon monoxide films by inelastic electron tunneling spectroscopy;The Journal of Physical Chemistry;1992-02
5. Tunneling spectroscopy possibilities in metal-oxide-semiconductor devices with a very thin oxide barrier;Thin Solid Films;1992-01
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