Dopant‐induced disordering of annealed AlGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108206
Reference25 articles.
1. Interdiffusion between GaAs and AlAs
2. Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
3. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
4. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
5. Effects of Be and Si on disordering of the AlAs/GaAs superlattice
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